EFA240D Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – Low Distortion GaAs Power FET

Excelics
EFA240D
DATA SHEET
Rev.1
Low Distortion GaAs Power FET
• +31.0dBm TYPICAL OUTPUT POWER
• 18.5dB TYPICAL POWER GAIN AT 2GHz
• 0.5 X 2400 MICRON RECESSED “MUSHROOM” GATE
• Si₃N₄ PASSIVATION AND PLATED HEAT SINK
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
• Idss SORTED IN 40mA PER BIN RANGE
410
104
D
72
620
155
75
S
G
S
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P_1dB
G_1dB
PAE
Output Power at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Gain at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=2GHz
Idss
Saturated Drain Current Vds=3V, Vgs=0V
100 94
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
MIN
29.0
16.0
TYP
31.0
31.0
18.5
13.5
MAX UNIT
dBm
dB
45
%
400 680 880 mA
Gm
Transconductance
Vds=3V, Vgs=0V
280 360
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=6mA
-2.0 -3.5 V
BVgd
Drain Breakdown Voltage Igd=2.4mA
-12 -15
V
BVgs
Source Breakdown Voltage Igs=2.4mA
-7 -14
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
23
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE¹
CONTINUOUS²
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-4V
Ids
Drain Current
Idss
620mA
Igsf
Forward Gate Current
60mA
10mA
Pin
Input Power
29dBm
Tch
Channel Temperature
175^oC
Tstg
Storage Temperature
-65/175^oC
@ 3dB Compression
150^oC
-65/150^oC
Pt
Total Power Dissipation
6.0 W
5.0 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
V
o_C/W
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com