EFA240BV-100P Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – Low Distortion GaAs Power FET

ISSUED 09/28/2007
EFA240BV-100P
Low Distortion GaAs Power FET
• NON-HERMETIC 100MIL METAL FLANGE PACKAGE
• +31.0dBm TYPICAL OUTPUT POWER
• 8.5dB TYPICAL POWER GAIN AT 12GHz
• 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE
G
D
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P_1dB
G_1dB
PAE
Output Power at 1dB Compression
V_DS=8V, I_DS=50% I_DSS
f= 12GHz
f= 18GHz
Gain at 1dB Compression
f= 12GHz
V_DS=8V, I_DS=50% I_DSS
f= 18GHz
Power Added Efficiency at 1dB Compression
V_DS=8V, I_DS=50% I_DSS
f=12GHz
I_DSS
Saturated Drain Current
V_DS=3V, V_GS=0V
Gm
Transconductance
V_DS=3V, V_GS=0V
Vp
Pinch-off Voltage
V_DS=3V,I_DS=6mA
BV_GD
Drain Breakdown Voltage
I_GD=2.4mA
BV_GS
Source Breakdown Voltage I_GS=2.4mA
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
Note: * Overall Rth depends on case mounting.
MIN
29.0
7
400
280
-13
-7
MAXIMUM RATINGS AT 25^OC
SYMBOLS
PARAMETERS
ABSOLUTE¹
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
Igf
Forward Gate Current
12V
-8V
60 mA
Igr
Reverse Gate Current
-1.8 mA
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
29 dBm
175^oC
-65/175^oC
Pt
Total Power Dissipation
9.1 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
TYP
MAX
UNIT
31.0
dBm
31.0
8.5
6.0
dB
33
%
680
880
mA
360
mS
-2.0
-3.5
V
-15
V
-14
V
15
ºC/W
CONTINUOUS²
8V
-4V
10 mA
-0.6 mA
@ 3dB Compression
175^oC
-65/175^oC
7.6 W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: [phone] Fax: [phone] Web: www.excelics.com
Revised September 2007