EFA160A Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – Low Distortion GaAs Power FET

Excelics
EFA160A
DATA SHEET
Low Distortion GaAs Power FET
• +29.0dBm TYPICAL OUTPUT POWER
840
• 9.0dB TYPICAL POWER GAIN AT 12GHz
• 0.3 X 1600 MICRON RECESSED
50 116
“MUSHROOM” GATE
D
D
D
D
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
40
S GSGSGSG S
• Idss SORTED IN 30mA PER BIN RANGE
95
80 50
Chip Thickness: 75 ± 13 microns
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC) ^{All Dimensions In Microns}
48
340
100
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
P_1dB
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
f=18GHz
27.0 29.0
29.0
dBm
G_1dB
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
f=18GHz
7.0 9.0
6.5
dB
PAE
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
34
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
260 420 600 mA
Gm
Transconductance
Vds=3V, Vgs=0V
180 240
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=4.0mA
-2.0 -3.5 V
BVgd
Drain Breakdown Voltage Igd=1.6mA
-12 -15
V
BVgs
Rth
Source Breakdown Voltage Igs=1.6mA
Thermal Resistance (Au-Sn Eutectic Attach)
-7 -14
30
V
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE¹ CONTINUOUS²
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-4V
Ids
Drain Current
Idss
475mA
Igsf
Forward Gate Current
40mA
7mA
Pin
Input Power
28dBm
Tch
Channel Temperature
175^oC
Tstg
Storage Temperature
-65/175^oC
@ 3dB Compression
150^oC
-65/150^oC
Pt
Total Power Dissipation
4.5W
3.8W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com