EFA120A Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – Low Distortion GaAs Power FET

Excelics
EFA120A
DATA SHEET
Low Distortion GaAs Power FET
• +28.0dBm TYPICAL OUTPUT POWER
• 9.5dB TYPICAL POWER GAIN AT 12GHz
• 0.3 X 1200 MICRON RECESSED
“MUSHROOM” GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
40
• Idss SORTED IN 20mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P_1dB
G_1dB
PAE
Output Power at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
f=18GHz
Gain at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
f=18GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
Idss
Saturated Drain Current Vds=3V, Vgs=0V
Gm
Transconductance
Vds=3V, Vgs=0V
Vp
Pinch-off Voltage
Vds=3V, Ids=3.0mA
BVgd
Drain Breakdown Voltage Igd=1.2mA
BVgs
Source Breakdown Voltage Igs=1.2mA
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
670
50 116
D
D
D
48
340
100
S ^G SG S ^G
S
95
80 50
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
MIN
26.0
8.0
200
TYP
28.0
28.0
9.5
7.0
34
340
MAX UNIT
dBm
dB
%
440 mA
140 180
mS
-2.0 -3.5 V
-12 -15
V
-7 -14
37
V
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE¹
CONTINUOUS²
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-4V
Ids
Drain Current
Idss
385mA
Igsf
Forward Gate Current
30mA
5mA
Pin
Input Power
26dBm
Tch
Channel Temperature
175^oC
Tstg
Storage Temperature
-65/175^oC
@ 3dB Compression
150^oC
-65/150^oC
Pt
Total Power Dissipation
3.7 W
3.1 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com