EFA080A Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Low Distortion GaAs Power FET

Excelics
EFA080A
DATA SHEET
Low Distortion GaAs Power FET
• +26.0dBm TYPICAL OUTPUT POWER
• 10.0dB TYPICAL POWER GAIN AT 12GHz
• 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
40
• Idss SORTED IN 15mA PER BIN RANGE
510
50 116
D
D
S GSG S
95 50 80
48
340
100
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
P_1dB
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
f=18GHz
24.0 26.0
26.0
dBm
G_1dB
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
f=18GHz
8.0 10.0
7.5
dB
PAE
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
%
35
Idss
Saturated Drain Current Vds=3V, Vgs=0V
130 210 300 mA
Gm
Transconductance
Vds=3V, Vgs=0V
90 120
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=2.0mA
-2.0 -3.5 V
BVgd
Drain Breakdown Voltage Igd=1.0mA
-12 -15
V
BVgs
Rth
Source Breakdown Voltage Igs=1.0mA
Thermal Resistance (Au-Sn Eutectic Attach)
-7 -14
55
V
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE¹
CONTINUOUS²
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-4V
Ids
Drain Current
Idss
260mA
Igsf
Forward Gate Current
20mA
4mA
Pin
Input Power
25dBm
Tch
Channel Temperature
175^oC
Tstg
Storage Temperature
-65/175^oC
@ 3dB Compression
150^oC
-65/150^oC
Pt
Total Power Dissipation
2.5 W
2.1 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com