EFA040A Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – Low Distortion GaAs Power FET

Excelics
EFA040A
DATA SHEET
Low Distortion GaAs Power FET
• +23.0dBm TYPICAL OUTPUT POWER
• 10.5 dB TYPICAL POWER GAIN AT 12GHz
• 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
• Idss SORTED IN 10mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P_1dB
G_1dB
PAE
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
f=18GHz
f=12GHz
f=18GHz
f=12GHz
Idss
Saturated Drain Current Vds=3V, Vgs=0V
Gm
Transconductance
Vds=3V, Vgs=0V
Vp
Pinch-off Voltage
Vds=3V, Ids=1.0 mA
BVgd
Drain Breakdown Voltage Igd=1.0mA
BVgs
Source Breakdown Voltage Igs=1.0mA
Rth
Thermal Resistance (Au-Sn Eutectic Attach)


'




6*6
 
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
MIN
21.0
9.0
60
TYP
23.0
23.0
10.5
8.0
35
105
MAX UNIT
dBm
dB
%
160 mA
45 60
mS
-2.0 -3.5 V
-12 -15
V
-7 -14
V
105
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE¹
CONTINUOUS²
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-4V
Ids
Drain Current
Idss
135mA
Igsf
Forward Gate Current
10mA
2mA
Pin
Input Power
22dBm
Tch
Channel Temperature
175^oC
Tstg
Storage Temperature
-65/175^oC
@ 3dB Compression
150^oC
-65/150^oC
Pt
Total Power Dissipation
1.3W
1.1W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com