EFA040A-100P Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – Low Distortion GaAs Power FET

UPDATED 11/17/2006
EFA040A-100P
Low Distortion GaAs Power FET
• NON-HERMETIC 100MIL METAL FLANGE PACKAGE
• +23.0dBm TYPICAL OUTPUT POWER
• 9.0dB TYPICAL POWER GAIN AT 12GHz
• 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE
• Si₃N₄ PASSIVATION
G
• ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES HIGH POWER
EFFICIENCY, LINEARITY AND RELIABILITY
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P_1dB
Output Power at 1dB Compression
V_DS = 8V, I_DS ≈ 50% I_DSS
f= 12GHz
f= 18GHz
G_1dB
Gain at 1dB Compression
V_DS = 8V, I_DS ≈ 50% I_DSS
f= 12GHz
f= 18GHz
PAE
Power Added Efficiency at 1dB Compression
V_DS = 8V, I_DS ≈ 50% I_DSS
f=12GHz
I_DSS
Saturated Drain Current
V_DS = 3 V, V_GS = 0 V
G_M
Transconductance
V_DS = 3 V, V_GS = 0 V
V_P
Pinch-off Voltage
V_DS = 3 V, I_DS = 1.0 mA
BV_GD
Drain Breakdown Voltage
I_GD = 1.0mA
BV_GS
Source Breakdown Voltage
I_GS = 1.0mA
R_TH
Thermal Resistance (Au-Sn Eutectic Attach)
Note: * Overall Rth depends on case mounting.
MIN
21.0
7.5
60
45
-13
-7
MAXIMUM RATINGS AT 25^OC
SYMBOLS
PARAMETERS
ABSOLUTE¹
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
Igf
Forward Gate Current
12V
-5V
1.8 mA
Igr
Reverse Gate Current
0.3 mA
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
20 dBm
175^oC
-65/175^oC
Pt
Total Power Dissipation
1.2 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
D
TYP
23.0
23.0
9.0
6.5
35
105
60
-2.0
-15
-14
115*
MAX
160
-3.5
UNIT
dBm
dB
%
mA
mS
V
V
V
ºC/W
CONTINUOUS²
8V
-4V
0.6 mA
0.1 mA
@ 3dB Compression
175^oC
-65/175^oC
1.2 W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: [phone] Fax: [phone] Web: www.excelics.com
Revised November 2006