EFA025A Datasheet, PDF (1/3 Pages) Excelics Semiconductor, Inc. – Low Distortion GaAs Power FET

Excelics
EFA025A
DATA SHEET
Low Distortion GaAs Power FET
• +21.0dBm TYPICAL OUTPUT POWER
• 11.0dB TYPICAL POWER GAIN AT 12GHz

 
• TYPICAL 1.5 dB NOISE FIGURE AND 10 dB ASSOCIATED
GAIN AT 12GHz
'
'

• 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE

• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE
 ^{6 *}
* 6 ^
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
  
• Idss SORTED IN 5mA PER BIN RANGE
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
TYP
MAX
UNIT
P1dB
Output Power at 1dB Compression
f=12GHz
19
21
dBm
Vds=8V, Ids=50% Idss
f=18GHz
21
G1dB
Gain at 1dB Compression
f=12GHz
9
11
dB
Vds=8V, Ids=50% Idss
f=18GHz
9
PAE Power Added efficiency at 1dB Compression
%
Vds=8V, Ids=50% Idss
f=12GHz
38
NF
Noise Figure Vds=3V,Ids=15mA
f=12GHz
1.5
dB
GA
Associated Gain Vds=3V,Ids=15mA f=12GHz
10
dB
Idss Saturated Drain Current Vds=3V, Vgs=0V
35
65
105
mA
Gm
Transconductance
Vds=3V, Vgs=0V
30
40
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=1.0mA
-2
-3.5
V
BVgd Drain Breakdown Voltage Igd=1.0mA
-12
-15
V
BVgs
Rth
Source Breakdown Voltage Igs=1.0mA
Thermal Resistance (Au-Sn Eutectic Attach)
-7
-14
155
V
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE¹ CONTINUOUS²
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-4V
Ids
Drain Current
Idss
90mA
Igsf
Forward Gate Current
6mA
1mA
Pin
Input Power
19dBm
Tch
Channel Temperature
175^oC
Tstg
Storage Temperature
-65/175^oC
@ 3dB Compression
150^oC
-65/150^oC
Pt
Total Power Dissipation
880mW
730mW
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com