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EFA025A-70 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – Low Distortion GaAs Power FET
UPDATED 04/28/2006
EFA025A-70
Low Distortion GaAs Power FET
FEATURES
• None-Hermetic Low Cost Ceramic 70mil Package
• +20.0 dBm Output Power at 1dB Compression
• 10.0 dB Power Gain at 12GHz
• 7.0 dB Power Gain at 18GHz
• Typical 1.50 dB Noise Figure and
10.0 dB Associated Gain at 12GHz
• 0.3 x 250 Micron Recessed “Mushroom” Gate
• Si3N4 Passivation
• Advanced Epitaxial Heterojunction Profile Provides High
Power Efficiency, Linearity and Reliability
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
PAE
NF
Output Power at 1dB Compression
f = 12GHz
VDS = 6V, IDS ≈ 50% IDSS
f = 18GHz
Gain at 1dB Compression
f = 12GHz
VDS = 6V, IDS ≈ 50% IDSS
f = 18GHz
Power Added Efficiency at 1dB Compression
VDS = 6V, IDS ≈ 50% IDSS
f = 12GHz
Noise Figure VDS = 3V, IDS = 15mA f = 12GHz
GA
Associate Gain VDS = 3V, IDS = 15mA f = 12GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
GM
Transconductance
VDS = 3 V, VGS = 0 V
VP
Pinch-off Voltage
VDS = 3 V, IDS = 1.0 mA
BVGD
Drain Breakdown Voltage
IGD = 1.0mA
BVGS
Source Breakdown Voltage IGS = 1.0mA
RTH
Thermal Resistance
Notes: * Overall Rth depends on case mounting.
MIN
17.0
8.5
35
30
-10
-6
TYP
20.0
20.0
10.0
7.0
35
1.5
10
65
40
-2.0
-15
-14
370*
MAX UNITS
dBm
dB
%
dB
dB
105 mA
mS
-3.5
V
V
V
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOL
CHARACTERISTIC
VALUE
VDS
Drain to Source Voltage
6V
VGS
Gate to Source Voltage
-4 V
IDS
Drain Current
52 mA
IGSF
Forward Gate Current
1 mA
PIN
Input Power
@ 3dB compression
PT
Total Power Dissipation
310 mW
TCH
Channel Temperature
150°C
TSTG
Storage Temperature
-65/+150°C
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 3
Revised May 2006