XRP6668 Datasheet, PDF (2/11 Pages) Exar Corporation – Step Down Converter

XRP6668
1A/1A Dual Channel 1.5MHz Sync. Step Down Converter
ABSOLUTE MAXIMUM RATINGS
These are stress ratings only and functional operation of
the device at these ratings or any other above those
indicated in the operation sections of the specifications
below is not implied. Exposure to absolute maximum
rating conditions for extended periods of time may affect
reliability.
Input Voltage V_IN ...................................... -0.3V to 6.0V
EN, V_FB Voltages .......................................... -0.3V to V_IN
SW Voltage.................................... -0.3V to (V_IN + 0.3V)
Storage Temperature .............................. -65°C to 150°C
Lead Temperature (Soldering, 10 sec) ................... 260°C
ESD Rating (HBM - Human Body Model) .................... 2kV
ESD Rating (MM - Machine Model) ...........................200V
Junction Temperature (Notes 1, 3) ....................... 150°C
OPERATING RATINGS
Input Voltage Range V_IN...............................2.5V to 5.5V
Junction Temperature Range ..................... -40°C to 85°C
Thermal Resistance ......................................................
θ_JA (8 Pin HSOIC) ........................................... 42°C/W
θ_JC (8 Pin HSOIC) ........................................... 10°C/W
ELECTRICAL SPECIFICATIONS
Specifications with standard type are for an Ambient Temperature of T_A = 25°C only; limits applying over the full Operating
Ambient Temperature range are denoted by a “•”. Minimum and Maximum limits are guaranteed through test, design, or
statistical correlation. Typical values represent the most likely parametric norm at T_A = 25°C, and are provided for reference
purposes only. Unless otherwise indicated, V_IN = 3.6V, T_A= 25°C.
Parameter
Input Voltage Range
Feedback Current
Regulated Feedback Voltage
Output Voltage Accuracy
Output Voltage Accuracy
Reference Voltage Line Regulation
Output Voltage Line Regulation
Peak Inductor Current
PWM Quiescent Current (Note 2)
PFM Quiescent Current
Shutdown
Oscillator Frequency
Short-Circuit Oscillator Frequency
R_DS(ON) of PMOS
R_DS(ON) of NMOS
Under Voltage Lock Out
SW Leakage
Enable Threshold
Shutdown Threshold
RUN Leakage Current
Min.
2.5
0.588
-3
-3
1.5
1.2
0.4
Typ.
0.600
2.3
376
30
0.1
1.5
900
0.24
0.21
1.8
Max.
5.5
+100
0.612
+3
+3
1
1
1
1.8
+1
1.2
+1
Units
V
nA
V
%
%
%/V
%/V
A
µA
µA
µA
MHz
kHz
Ω
Ω
V
µA
V
V
µA
Conditions
I_OUT=100mA, V_IN = 2.5V to 3.0V
• I_OUT=100mA, V_IN = 3.0V to 5.5V
• V_IN = 3V to 5.5V
• V_IN = 3V to 5.5V
V_FB = 0.5V or V_OUT = 90%
V_FB = 0.5V or V_OUT = 90%, dual channel
V_FB = 0.65V or V_OUT = 108%, dual
channel
V_RUN = 0V, V_IN = 4.2V, dual channel
• V_FB = 0.6V or V_OUT = 100%
• V_FB = 0V or V_OUT = 0V
I_SW = 100mA
I_SW = –100mA
V_RUN = 0V, V_SW = 0V or 5V, V_IN = 5V
•
•
•
Note 1: T_J is a function of the ambient temperature T_A and power dissipation P_D: (T_J = T_A + (P_D * θ_JA))
Note 2: Dynamic quiescent current is higher due to the gate charge being delivered at the switching frequency.
Note 3: This IC has built-in over-temperature protection to avoid damage from overload conditions.
Note 4: θ_JA is measured in the natural convection at TA=25 on a high effective thermal conductivity test board (4 layers,
2S2P) of JEDEC 51-5 thermal measurement standard.
Note 5: θ_JC represents the resistance to the heat flows the chip to package top case.
© 2011 Exar Corporation
2/11
Rev. 1.2.0