XRP6657_12 Datasheet, PDF (2/11 Pages) Exar Corporation – 1.5A 1.3MHz Synchronous Step Down Converter

XRP6 6 5 7
1 .5 A 1 .3 M H z Sy n ch r o n o u s St e p D o w n Co n v e r t e r
ABSOLUTE MAXIMUM RAT INGS
These are stress ratings only and functional operation of
the device at these ratings or any other
above those
indicated in the operation sections of the specifications
below is not implied. Exposure to absolute maximum
rating conditions for extended periods of time may affect
reliability.
Input Voltage VIN ................................
....... - 0.3V to 6.0V
EN, V FB Voltage ................................
........... - 0.3V to V IN
SW Voltage ................................
...... - 0.3V to (V IN +0.3V)
PMOS Switch Source Current (DC) ..............................
2A
NMOS Switch Sink Current (DC) ................................
. 2A
Peak Switch Sink and Source Current ....................... 3.5A
Junction Temperature TJ1,2 ................................
.... 125ºC
Lead Temperature (Soldering, 10 sec)
................... 26 0°C
Storage Temp. Range T STG ....................... - 65ºC to 150ºC
ESD Rating (HBM - Human Body Model) .................... 2kV
ESD Rating (MM - Machine Model) ........................... 200V
OPERATING RATINGS
Input Voltage Range V IN ...............................
Ambient Temperature Range TA .................
7KHUPDO5HVJLC .V....W....D...Q....F....H.......LJ.....
7KHUPDO5HVJLA .V....W....D...Q....F....H.......LJ.....
2. 5V to 5.5V
- 40°C to 85 °C
...... 10ºC/W
...... 55ºC/W
Note 1: TJ is a function of the ambient temperature T
power dissipation P D (T J= T A + P D x 55°C/W).
A and
Note 2:XRP6657 has a build - in temperature protection
circuitry to avoid damages from overload conditions.
ELECTRICAL SPECIFICA TIONS
Specifications with standard type are for
an Operating Junction Temperature of
TA = 25°C only; limits applying over the full
Operating Ambient 7HPSHUDWXUH UDQJH DU‡H´GH0QLRQWLHPGXPE\DQDG³0D[LPXP OLPLWV DUH JXDUD
design, or statistical correlation. Typical values represen
t the most likely parametric norm at T
A = 25°C, and are provided
for reference purposes only. Unless otherwise indicated, V
IN = 5.0 V, T A= 25°C.
Parameter
Feedback Current I VFB
Regulated Feedback Voltage V FB
Reference Voltage Line
Regulation Æ©9FB3
Output Voltage Accuracy Æ©9OUT%
Output Over - Voltage Lockout
Æ©9OVL
Output Voltage Line Regulation
Æ©9OUT4
Peak Inductor Current I PK
Min.
0.588
0.585
- 2.5
20
Output Voltage Load Regulation
VLOADREG
Quiescent Current
I
2
Q
Shutdown Current I SHTDWN
Oscillator Frequency fOSC
Minimum Duty Cycle DMIN
RDS(ON) of PMOS RPFET
RDS(ON) of NMOS RNFET
SW Leakage I LSW
Enable Threshold VEN
Shutdown Threshold VEN
EN Leakage Current I EN
1.04
0.4
Typ.
0.600
0.600
50
2.4
0.2
240
0.1
1.3
20
0.18
0.16
Max.
±100
0.612
0.615
0.4
2.5
80
0.4
340
1
1.56
±1
1.2
±1
Units
nA
V
%/V
%
mV
%/V
A
%/ A
µA
µA
MHz
%
Ÿ
Ÿ
µA
V
V
µA
Conditions
TA = 25°C
‡ - ƒ&_A””7ƒ&
‡ V_IN = 2.5V to 5.5V
‡
Æ©9OVL = VOVL - VFB
‡ V_IN = 2.5V to 5.5V
VIN =3V, V FB=0.5V or V OUT=90%,
duty cy cle<35%
I OUT=10mA to 1.5A
VFB=0.5V or V OUT=90%
VEN=0V, V IN =4.2V
‡ V_FB=0.6V or V _OUT=100%
I SW=750mA
I SW= - 750mA
VEN=0V, V SW=0V or 5V, V IN=5V
‡
‡
‡
Note 1: The Switch Current Limit is related to the Duty Cycle. Please refer
to figure 29 for details.
Note 2: Dynamic quiescent current is higher due to the gate charge being delivered at the switching frequency.
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Note 3: Reference Voltage Line Regulation
s is defined as οܸ_ி஻ൌ_{௏಺ೇಿమಷି}^ಳ_௏^{భ಺ಿభ} ൈͳͲͲ
© 2012 Exar Corporation
2/ 11
Rev. 1.4.0