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| PT67-21B Datasheet, PDF (4/8 Pages) Everlight Electronics Co., Ltd – high speed silicon NPN epitaxial planar phototransistor in a compact surface-mountable package. | |||
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EVERLIGHT ELECTRONICS CO., LTD.
Top Phototransistor
DEVICE NUMBER : DTT-067-028
ECN :
REV : 1.0
PAGE : 3/7
MODEL NO : PT67-21B/C2/L41/TR8
Absolute Maximum Ratings at TA = 25
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
60
V
Emitter-Collector-Voltage
VECO
5
V
Collector Current
IC
50
mA
Operating Temperature
Topr
-25 ~ +85
Storage Temperature
Tstg
-40 ~ +85
Lead Soldering Temperature
Tsol
260
Power Dissipation at(or below)
25Free Air Temperature
Pc
100
Notice
Electronic Optical Characteristics :
Parameter
Collector-Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector-Emitter
Saturation Voltage
Rise Time
Fall Time
Collector Dark Current
Symbol Min.
BVCEO
60
BVECO
5
VCE(sat)
----
tr
----
tf
----
ICEO
----
Typ.
----
----
----
15
15
----
On State Collector Current
IC(on)
Wavelength of
Peak Sensitivity
P
Rang of Spectrial Bandwith
0.5
1.0
----
980
----
700---
1200
Max.
----
----
0.4
----
----
100
----
----
----
Unit
V
V
V
S
nA
mA
nm
nm
Condition
IC=100 A
Ee=0mW/c
IE=100 A
Ee=0mW/c
IC=2mA
Ee=1mW/c
VCE=5V
IC=1mA
RL=1000
Ee=0mW/c
VCE=20V
Ee=1mW/c
VCE=5V
----
----
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