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| PT958-8C_09 Datasheet, PDF (3/7 Pages) Everlight Electronics Co., Ltd – 1.6mm Side Looking Phototransistor | |||
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Absolute Maximum Ratings (Ta=25â)
Parameter
Symbol Rating
Collector-Emitter Voltage
Emitter-Collector-Voltage
Collector Current
Operating Temperature
VCEO
VECO
IC
Topr
30
5
20
-25 ~ +85
Storage Temperature
Tstg -40 ~ +100
Lead Soldering Temperature(*1) Tsol
260
Power Dissipation at (or below)
25â Free Air Temperature
Pd
75
Notes: *1:Soldering timeâ¦5 seconds.
Units
V
V
mA
â
â
â
mW
PT958-8C
Electro-Optical Characteristics (Ta=25â)
Parameter
Symbol Condition Min.
Collector â Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
IC=100μA
BVCEO Ee=0mW/cm2
30
IE=100μA
BVECO Ee=0mW/cm2
5
Collector-Emitter
Saturation Voltage
Rise Time
Fall Time
Collector Dark Current
On State Collector Current
Wavelength of
Peak Sensitivity
V(CE)(sat)
IC=2mA
Ee=1mW/cm2
---
tr
tf
ICEO
IC(on)
VCE=5V
IC=1mA
---
RL=1000Ω
---
Ee=0mW/cm2
VCE=20V
---
Ee=0.555mW/cm2
VCE=5V
0.53
λp
---
---
Rang of Spectral Bandwidth λ0.5
---
400
Typ.
---
---
---
15
15
---
---
940
---
Max. Units
--- V
--- V
0.4 V
--- μS
---
100 nA
3.41 mA
--- nm
1100 nm
Everlight Electronics Co., Ltd.
Device No: DPT-0000021
http://www.everlight.com
Prepared date: 2009/1/19
Rev. 3
Page: 3of 7
Prepared by: else zhuang
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