PT91-21C-TR10 Datasheet, PDF (3/10 Pages) Everlight Electronics Co., Ltd – 1.9mm Round Subminiature“ Z-Bend” Lead Phototransistor

PT91-21C/TR10
Electro-Optical Characteristics (Ta=25℃)
Parameter
Symbol
Condition
Rang Of Spectral Bandwidth
10%λ_P
---
Wavelength Of Peak Sensitivity
Collector-Emitter Breakdown
Voltage
λ_P
BV_CEO
---
I_C=100μA
Ee=0mW/cm²
Emitter-Collector Breakdown
Voltage
BV_ECO
I_E=100μA
Ee=0mW/cm²
Collector-Emitter Saturation
Voltage
V_CE(sat)
I_C=2mA
Ee=1m W/cm²
Collector Dark Current
I_CEO
V_CE=20V
Ee=0mW/cm²
Min Typ Max Unit
400 --- 1100 nm
--- 940 --- nm
30 --- --- V
5 --- --- V
--- --- 0.4 V
--- --- 100 nA
On State Collector Current
I_C(ON)
V_CE=5V
Ee=1mW /cm²
1.0 1.5 --- mA
Rise Time
Fall Time
t_r
V_CE=5V
--- 15 ---
I_C=1mA
μS
t_f
R_L=1000Ω
--- 15 ---
Intensity Specifications for Bin Grading
Rank Test Condition
Min
Max
Unit
Bin1
1.0
2.0
Bin2
Ee=1mW/cm²
1.5
Bin3
2.0
Bin4
V_CE=5V
2.5
3.0
4.0
mA
5.0
Bin5
3.0
6.0
Everlight Electronics Co., Ltd.
Device No：DTT-091-032
http:\\www.everlight.com
Prepared date：08-02-2006
Rev 2
Page: 3 of 10
Prepared by：Jaine Tsai