6N135 Datasheet, PDF (1/14 Pages) Toshiba Semiconductor – IRED & PHOTO IC (DIGITAL LOGIC ISOLATION)

8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR 6N135 6N136
PHOTOCOUPLER
EL450X series
Features
• High speed 1Mbit/s
• High isolation voltage between input
and output (Viso=5000 Vrms )
• Guaranteed performance from 0°C to 70°C
• Wide operating temperature range of -55°C to 100°C
• Pb free and RoHS compliant
• UL approved (No. 214129)
• VDE approved (No. 132249)
• SEMKO approved
• NEMKO approved
• DEMKO approved
• FIMKO approved
• CSA approved (No. 2037145)
Description
Schematic
The 6N135, 6N136, EL4502 and EL4503 devices each
consist of an infrared emitting diode, optically coupled to a high
speed photo detector transistor. A separate connection for the
photodiode bias and output-transistor collector increase the
speed by several orders of magnitude over conventional
phototransistor couplers by reducing the base-collector
capacitance of the input transistor.
The devices are packaged in an 8-pin DIP package and
available in wide-lead spacing and SMD option.
Applications
• Line receivers
• Telecommunication equipments
• Power transistor isolation in motor drives
• Replacement for low speed phototransistor photo couplers
• Feedback loop in switch-mode power supplies
• Home appliances
• High speed logic ground isolation
1
81
8
2
72
7
3
63
6
4
54
5
6N135 / 6N136
Pin Configuration
1. No Connection
2. Anode
3. Cathode
4. No Connection
5. Gnd
6. Vout
7. V_B
8. V_CC
EL4502 / EL4503
Pin Configuration
1. No Connection
2. Anode
3. Cathode
4. No Connection
5. Gnd
6. Vout
7. No Connection
8. V_CC
： ^{Everlight Electronics Co., Ltd.}
Document No DPC-0000112
Rev.1
1
http://www.everlight.com
October 4, 2011