BSM50GB120DN2 Datasheet, PDF (6/10 Pages) Siemens Semiconductor Group – IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)

BSM 50 GB 120 DN2
Typ. gate charge
V_GE = ƒ(Q_Gate)
parameter: I_{C puls} = 50 A
20
V
V_GE ¹⁶
14
600 V
800 V
12
10
8
6
4
2
0
0 40 80 120 160 200 240 280 nC 340
Q_Gate
Reverse biased safe operating area
I_Cpuls = f(V_CE) , T_j = 150°C
parameter: V_GE = 15 V
2.5
Typ. capacitances
C = f (V_CE)
parameter: V_GE = 0, f = 1 MHz
10 ²
nF
C
10 ¹
Ciss
10 ⁰
Coss
Crss
10 ^-1
0
5 10 15 20 25 30 V 40
V_CE
Short circuit safe operating area
I_Csc = f(V_CE) , T_j = 150°C
parameter: V_GE = ± 15 V, t_SC ≤ 10 µs, L < 50 nH
12
I_Cpuls/I_C
1.5
1.0
0.5
I_Csc/I_C
8
6
4
2
0.0
0 200 400 600 800 1000 1200 V 1600
V_CE
0
0 200 400 600 800 1000 1200 V 1600
V_CE
6
Oct-21-1997