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2N7002 Datasheet, PDF (6/9 Pages) Pan Jit International Inc. – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=0.3 A; V GS=10 V
6.0
5.0
4.0
98 %
3.0
2.0
typ
1.0
0.0
-60
-20
20
60
100
140
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
102
10 Typ. gate threshold voltage
V GS(th)=f(T j); V DS=VGS; I D=250 µA
parameter: I D
3.2
2N7002
2.8
2.4
98 %
2
typ
1.6
2%
1.2
0.8
0.4
0
-60
-20
20
60
100
140
T j [°C]
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
101
150 °C, 98%
100
25 °C
150 °C
25 °C, 98%
Ciss
101
10-1
100
0
Rev. 2.3
10
20
V DS [V]
Coss
Crss
30
10-2
10-3
0
page 6
0.4
0.8
1.2
V SD [V]
1.6
2010-08-26
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