BSM100GB120DN2 Datasheet, PDF (5/11 Pages) Siemens Semiconductor Group – IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)

BSM 100 GB 120 DN2
Typ. output characteristics
I_C = f (V_CE)
parameter: t_p = 80 µs, T_j = 25 °C
200
A
17V
I_C
160
15V
13V
11V
140
9V
7V
120
100
80
60
40
20
0
0
1
2
3
V
5
V_CE
Typ. transfer characteristics
I_C = f (V_GE)
parameter: t_p = 80 µs, V_CE = 20 V
200
A
I_C
160
140
120
100
80
60
40
20
0
0
2
4
6
8 10 V 14
V_GE
Typ. output characteristics
I_C = f (V_CE)
parameter: t_p = 80 µs, T_j = 125 °C
200
A
17V
I_C
160
15V
13V
11V
140
9V
7V
120
100
80
60
40
20
0
0
1
2
3
V
5
V_CE
5
Oct-21-1997