FP50R12KE3 Datasheet, PDF (3/11 Pages) eupec GmbH – Elektrische Eigenschaften / Electrical properties

Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP50R12KE3
Elektrische Eigenschaften / Electrical properties
Vorläufige Daten
Preliminary data
Charakteristische Werte / Characteristic values
Modulinduktivität
stray inductance module
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
T_C = 25°C
Diode Wechselrichter/ Diode Inverter
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
V_GE = 0V, T_vj = 25°C, I_F =
V_GE = 0V, T_vj = 125°C, I_F =
I_F=I_Nenn,
- di_F/dt =
V_GE = -10V, T_vj = 25°C, V_R =
V_GE = -10V, T_vj = 125°C, V_R =
I_F=I_Nenn,
- di_F/dt =
V_GE = -10V, T_vj = 25°C, V_R =
V_GE = -10V, T_vj = 125°C, V_R =
I_F=I_Nenn,
- di_F/dt =
V_GE = -10V, T_vj = 25°C, V_R =
V_GE = -10V, T_vj = 125°C, V_R =
50 A
50 A
1200 A/µs
600 V
600 V
1200 A/µs
600 V
600 V
1200 A/µs
600 V
600 V
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
V_GE = 15V, T_vj = 25°C, I_C =
V_GE = 15V, T_vj = 125°C, I_C =
40 A
40 A
Gate-Schwellenspannung
gate threshold voltage
V_CE = V_GE, T_vj = 25°C, I_C = 1,5 mA
Eingangskapazität
input capacitance
f = 1MHz, T_vj = 25°C
V_CE = 25 V, V_GE = 0 V
Kollektor-Emitter Reststrom
collector-emitter cut off current
Gate-Emitter Reststrom
gate-emitter leakage current
Schaltverluste und -bedingungen
Switching losses and conditions
V_GE = 0V, T_vj = 25°C, V_CE = 1200 V
V_CE = 0V, V_GE = 20V, T_vj = 25°C
siehe Wechselrichter in Dbl FP40R12KE3
see inverter in datasheet FP40R12KE3
Diode Brems-Chopper/ Diode Brake-Chopper
Durchlaßspannung
T_vj = 25°C,
I_F = 40 A
forward voltage
T_vj = 125°C,
I_F = 40 A
Schaltverluste und -bedingungen
siehe Wechselrichter in Dbl FP15R12KE3
Switching losses and conditions
see inverter in datasheet FP15R12KE3
min.
L_σCE
-
R_CC'+EE'
-
min.
V_F
-
-
I_RM
-
-
Q_r
-
-
E_RQ
V_{CE sat}
-
-
min.
-
-
V_GE(TO)
5,0
C_ies
-
I_CES
-
I_GES
-
min.
V_F
-
-
typ.
-
7
typ.
1,65
1,65
51
50
6,2
12
2,1
4,4
typ.
1,8
2,15
5,8
2,5
5,0
-
typ.
2,35
2,55
max.
100
-
max.
2,2
-
-
-
-
-
-
-
max.
2,3
-
6,5
-
-
400
max.
2,8
-
nH
mΩ
V
V
A
A
µAs
µAs
mWs
mWs
V
V
V
nF
mA
nA
V
V
NTC-Widerstand/ NTC-Thermistor
Nennwiderstand
rated resistance
Abweichung von R₁₀₀
deviation of R₁₀₀
T_C = 25°C
T_C = 100°C, R₁₀₀ = 493 Ω
min. typ. max.
R₂₅
-
5
-
kΩ
∆R/R -5
5
%
Verlustleistung
power dissipation
B-Wert
B-value
T_C = 25°C
R₂ = R₁ exp [B(1/T₂ - 1/T₁)]
P₂₅
B_25/50
20 mW
3375
K
3(11)
DB-PIM-IGBT3_1.xls