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FP15R12KE3G Datasheet, PDF (3/11 Pages) eupec GmbH – IGBT-Module
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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP15R12KE3G
Elektrische Eigenschaften / Electrical properties
Vorläufige Daten
Preliminary data
Charakteristische Werte / Characteristic values
min. typ. max.
Modulinduktivität
stray inductance module
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
TC = 25°C
Diode Wechselrichter/ Diode Inverter
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
VGE = 0V, Tvj = 25°C, IF =
VGE = 0V, Tvj = 125°C, IF =
IF=INenn,
- diF/dt =
VGE = -10V, Tvj = 25°C, VR =
VGE = -10V, Tvj = 125°C, VR =
IF=INenn,
- diF/dt =
VGE = -10V, Tvj = 25°C, VR =
VGE = -10V, Tvj = 125°C, VR =
IF=INenn,
- diF/dt =
VGE = -10V, Tvj = 25°C, VR =
VGE = -10V, Tvj = 125°C, VR =
15 A
15 A
400 A/µs
600 V
600 V
400 A/µs
600 V
600 V
400 A/µs
600 V
600 V
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
VGE = 15V, Tvj = 25°C, IC = 10 A
VGE = 15V, Tvj = 125°C, IC = 10 A
Gate-Schwellenspannung
gate threshold voltage
VCE = VGE, Tvj = 25°C, IC = 0,3 mA
Eingangskapazität
input capacitance
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V
Kollektor-Emitter Reststrom
collector-emitter cut off current
Gate-Emitter Reststrom
gate-emitter leakage current
VGE = 0V, Tvj = 25°C, VCE = 1200 V
VCE = 0V, VGE = 20V, Tvj = 25°C
Schaltverluste und -bedingungen
Switching losses and conditions
siehe Wechselrichter in Dbl FP10R12KE3
see inverter in datasheet FP10R12KE3
Diode Brems-Chopper/ Diode Brake-Chopper
Durchlaßspannung
forward voltage
Tvj = 25°C,
Tvj = 125°C,
IF = 10 A
IF = 10 A
Schaltverluste und -bedingungen
Switching losses and conditions
siehe Wechselrichter in Dbl FB10R12KE3
see inverter in datasheet FB10R12KE3
NTC-Widerstand/ NTC-Thermistor
Nennwiderstand
rated resistance
Abweichung von R100
deviation of R100
TC = 25°C
TC = 100°C, R100 = 493 Ω
LσCE
-
-
100 nH
RCC'+EE'
-
7
-
mΩ
min. typ. max.
VF
-
1,65 2,2
V
-
1,65
-
V
IRM
-
16
-
A
-
15
-
A
Qr
-
1,8
-
µAs
-
3
-
µAs
ERQ
VCE sat
-
-
min.
-
-
0,55
1,1
typ.
1,85
2,25
-
-
max.
2,5
-
mWs
mWs
V
V
VGE(TO)
5,0
5,8
6,5
V
Cies
-
0,6
-
nF
ICES
-
5,0
-
mA
IGES
-
-
400 nA
min. typ. max.
VF
-
1,8 2,5
V
-
1,85
-
V
min. typ. max.
R25
-
5
-
kΩ
∆R/R -5
5
%
Verlustleistung
power dissipation
B-Wert
B-value
TC = 25°C
R2 = R1 exp [B(1/T2 - 1/T1)]
P25
B25/50
20 mW
3375
K
3(11)
DB-PIM-IGBT3_1.xls
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