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FB10R06KL4GB1 Datasheet, PDF (3/13 Pages) eupec GmbH – IGBT-Modules
◁
Technische Information / technical information
IGBT-Module
IGBT-Modules
FB10R06KL4GB1
Elektrische Eigenschaften / electrical properties
Vorläufig
preliminary
Charakteristische Werte / characteristic values
Modulinduktivität
stray inductance module
min. typ. max.
LσCE
-
-
40
nH
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
TC = 25°C
RCC'+EE'
-
10
-
mΩ
Diode Wechselrichter / diode inverter
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
VGE = 0V, Tvj = 25°C, IF =
VGE = 0V, Tvj = 125°C, IF =
IF=INenn,
- diF/dt =
VGE = -10V, Tvj = 25°C, VR =
VGE = -10V, Tvj = 125°C, VR =
IF=INenn,
- diF/dt =
VGE = -10V, Tvj = 25°C, VR =
VGE = -10V, Tvj = 125°C, VR =
IF=INenn,
- diF/dt =
VGE = -10V, Tvj = 25°C, VR =
VGE = -10V, Tvj = 125°C, VR =
10 A
10 A
600 A/us
300 V
300 V
600 A/us
300 V
300 V
600 A/us
300 V
300 V
Transistor Brems-Chopper / transistor brake-chopper
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
VGE = 15V, Tvj = 25°C, IC = 10,0 A
VGE = 15V, Tvj = 125°C, IC = 10,0 A
Gate-Schwellenspannung
gate threshold voltage
VCE = VGE, Tvj = 25°C, IC = 0,35mA
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V
VGE = 0V, Tvj = 25°C, VCE = 600V
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 0V, VGE = 20V, Tvj = 25°C
min. typ. max.
VF
-
1,85 2,25
V
-
1,9
-
V
IRM
-
11
-
A
-
12
-
A
Qr
-
0,35
-
µAs
-
0,71
-
µAs
Erec
-
0,05
-
mJ
-
0,12
-
mJ
min. typ. max.
VCE sat
-
1,95 2,55
V
-
2,2
-
V
VGE(TO) 4,5
5,5
6,5
V
Cies
-
0,8
-
nF
-
-
5,0 mA
IGES
-
-
400 nA
Diode Brems-Chopper / diode brake-chopper
Durchlaßspannung
forward voltage
Tvj = 25°C,
Tvj = 125°C,
I F = 10,0 A
I F = 10,0 A
min. typ. max.
VF
-
1,85 2,25
V
-
1,9
-
V
NTC-Widerstand / NTC-thermistor
Nennwiderstand
rated resistance
Abweichung von R100
deviation of R100
Verlustleistung
power dissipation
B-Wert
B-value
TC = 25°C
TC = 100°C, R100 = 493 Ω
TC = 25°C
R2 = R1 exp [B(1/T2 - 1/T1)]
min. typ. max.
R25
-
5
-
kΩ
∆R/R -5
5
%
P25
20 mW
B25/50
3375
K
3(12)
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