BSM150GB170DN2 Datasheet, PDF (3/10 Pages) Siemens Semiconductor Group – IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)

BSM 150 GB 170 DN2
Electrical Characteristics, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Switching Characteristics, Inductive Load at T_j = 125 °C
Turn-on delay time
t_d(on)
V_CC = 1200 V, V_GE = 15 V, I_C = 150 A
R_Gon = 10 Ω
-
Rise time
t_r
V_CC = 1200 V, V_GE = 15 V, I_C = 150 A
R_Gon = 10 Ω
-
Turn-off delay time
t_d(off)
V_CC = 1200 V, V_GE = -15 V, I_C = 150 A
R_Goff = 10 Ω
-
Fall time
t_f
V_CC = 1200 V, V_GE = -15 V, I_C = 150 A
R_Goff = 10 Ω
-
520
200
1200
110
1000
400
1800
160
Unit
ns
Free-Wheel Diode
Diode forward voltage
V_F
I_F = 150 A, V_GE = 0 V, T_j = 25 °C
-
I_F = 150 A, V_GE = 0 V, T_j = 125 °C
-
Reverse recovery time
t_rr
I_F = 150 A, V_R = -1200 V, V_GE = 0 V
di_F/dt = -1200 A/µs, T_j = 125 °C
-
Reverse recovery charge
Q_rr
I_F = 150 A, V_R = -1200 V, V_GE = 0 V
di_F/dt = -1200 A/µs
T_j = 25 °C
-
T_j = 125 °C
-
V
2.3
2.8
2.1
-
µs
0.6
-
µC
11
-
36
-
3
Oct-27-1997