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FP75R12KE3 Datasheet, PDF (2/11 Pages) eupec GmbH – Elektrische Eigenschaften / Electrical properties
◁
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP75R12KE3
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
Vorläufige Daten
Preliminary data
VISOL
2,5
kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier
Durchlaßspannung
forward voltage
Tvj = 150°C,
Schleusenspannung
threshold voltage
Tvj = 150°C
Ersatzwiderstand
slope resistance
Tvj = 150°C
Sperrstrom
reverse current
Tvj = 150°C,
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
TC = 25°C
IF = 75 A
VR = 1600 V
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
VGE = 15V, Tvj = 25°C, IC =
VGE = 15V, Tvj = 125°C, IC =
Gate-Schwellenspannung
gate threshold voltage
VCE = VGE, Tvj = 25°C, IC =
Eingangskapazität
input capacitance
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V
Kollektor-Emitter Reststrom
collector-emitter cut off current
Gate-Emitter Reststrom
gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
VGE = 0V, Tvj = 25°C, VCE =
VCE = 0V, VGE =20V, Tvj =25°C
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 125°C, RG =
LS =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 125°C, RG =
LS =
tP ≤ 10µs, VGE ≤ 15V, RG =
Tvj≤125°C,
VCC =
75 A
75 A
3,0 mA
1200 V
600 V
5 Ohm
5 Ohm
600 V
5 Ohm
5 Ohm
600 V
5 Ohm
5 Ohm
600 V
5 Ohm
5 Ohm
600 V
5 Ohm
45 nH
600 V
5 Ohm
45 nH
5 Ohm
720 V
min. typ. max.
VF
-
1,15
-
V
V(TO)
-
-
0,8
V
rT
-
-
6,5 mΩ
IR
-
3
-
mA
RAA'+CC'
-
4
-
mΩ
min. typ. max.
VCE sat
-
1,7 2,2
V
-
2
-
V
VGE(TO)
5,0
5,8
6,5
V
Cies
-
5,3
-
nF
ICES
-
-
5
mA
IGES
-
-
400 nA
td,on
-
260
-
ns
-
285
-
ns
tr
-
30
-
ns
-
45
-
ns
td,off
-
420
-
ns
-
520
-
ns
tf
-
65
-
ns
-
90
-
ns
Eon
-
9,4
-
mWs
Eoff
-
9,4
-
mWs
ISC
-
300
-
A
2(11)
DB-PIM-IGBT3_1.xls
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