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T4301N Datasheet, PDF (1/9 Pages) eupec GmbH – Phase Control Thyristor
N
Datenblatt / Data sheet
Netz-Thyristor
Phase Control Thyristor
T 4301N
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
PreepreKiotidetiivsnecnhpedeaaVktoerfwonräwrtasr-duonfdf-sRtaütcekawnädrtsre-Svepritszeenvsoplteagrrespannung Tvj = -40°C... Tvj max
Elektrische Eigenschaften
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
TC = 85 °C
TC = 60 °C
Stoßstrom-Grenzwert
surge current
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
DIN IEC 60747-6
f = 50 Hz, iGM = 3 A, diG/dt = 6 A/µs
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
Tvj = Tvj max, vD = 0,67 VDRM
5.Kennbuchstabe / 5th letter F
VDRM,VRRM 2200
2800
ITRMSM
ITAVM
ITSM
I²t
(diT/dt)cr
(dvD/dt)cr
2600 V
2900 V
9420 A
4300 A
6000 A
100000 A
91000 A
50000 10³ A²s
41400 10³ A²s
300 A/µs
1000 V/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlaßkennlinie
on-state characteristic
400A ≤ iF ≤ 5000A
v T = A + B ⋅ iT + C ⋅ Ln ( iT + 1) + D ⋅ iT
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
prepared by: C. Schneider
approved by: J. Przybilla
Tvj = Tvj max , iT = 4000A
Tvj = Tvj max
Tvj = Tvj max
Tvj = Tvj max
vT
V(TO)
rT
typ.
max.
Tvj = 25°C, vD = 12 V
IGT
Tvj = 25°C, vD = 12 V
VGT
Tvj = Tvj max , vD = 12 V
Tvj = Tvj max , vD = 0,5 VDRM
Tvj = Tvj max , vD = 0,5 VDRM
IGD
VGD
Tvj = 25°C, vD = 12 V
IH
Tvj = 25°C, vD = 12 V, RGK ≥ 10 Ω IL
iGM = 3 A, diG/dt = 6 A/µs, tg = 20 µs
Tvj = Tvj max
vD = VDRM, vR = VRRM
iD, iR
DIN IEC 60747-6
tgd
Tvj = 25 °C,iGM = 3 A, diG/dt = 6 A/µs
date of publication: 2006-05-05
revision:
8
typ. 1,15 V
max. 1,2 V
typ. 0,738 V
max. 0,772 V
typ. 0,103 mΩ
max. 0,107 mΩ
A 0,6001
B 0,0000338
C -0,0094
D 0,00776
A 0,6009
B 3,404E-05
C -0,00622
D 0,00808
max. 350 mA
max. 2,5 V
max.
max.
max.
20 mA
10 mA
0,4 V
max. 350 mA
max.
3A
max. 600 mA
max.
2 µs
BIP AM / SM PB, 2001-04-10, Przybilla J. / Keller
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