T2871N Datasheet, PDF (1/9 Pages) eupec GmbH – Phase Control Thyristor

N
Datenblatt / Data sheet
Netz-Thyristor
Phase Control Thyristor
T 2871N
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Preepre_Kiotid_etiivsnecnhpe_deaaVk_to_erfwo_{nräwrtasr-duonfdf-sRtaütcekawnädrtsre-Svepritszeenvsoplteagrrespannung} T_vj = -40°C... T_{vj max}
Elektrische Eigenschaften
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
T_C = 85 °C
T_C = 60 °C
Stoßstrom-Grenzwert
surge current
T_vj = 25 °C, t_P = 10 ms
T_vj = T_{vj max}, t_P = 10 ms
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
T_vj = 25 °C, t_P = 10 ms
T_vj = T_{vj max}, t_P = 10 ms
DIN IEC 60747-6
f = 50 Hz, i_GM = 3 A, di_G/dt = 6 A/µs
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T_vj = T_{vj max}, v_D = 0,67 V_DRM
5.Kennbuchstabe / 5^th letter H
V_DRM,V_RRM 7500
I_TRMSM
I_TAVM
I_TSM
I²t
(di_T/dt)_cr
(dv_D/dt)_cr
8000 V
5760 A
2680 A
3670 A
93000 A
90000 A
43250 10³ A²s
40500 10³ A²s
300 A/µs
2000 V/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlaßkennlinie
on-state characteristic
500A ≤ i_F ≤ 6000A
v _T = A + B ⋅ i_T + C ⋅ Ln ( i_T + 1) + D ⋅ i_T
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
prepared by: C. Schneider
approved by: J. Przybilla
T_vj = T_{vj max} , i_T = 5000A
T_vj = T_{vj max}
T_vj = T_{vj max}
T_vj = T_{vj max}
v_T
V_(TO)
r_T
typ.
max.
T_vj = 25°C, v_D = 12 V
I_GT
T_vj = 25°C, v_D = 12 V
V_GT
T_vj = T_{vj max} , v_D = 12 V
T_vj = T_{vj max} , v_D = 0,5 V_DRM
T_vj = T_{vj max} , v_D = 0,5 V_DRM
I_GD
V_GD
T_vj = 25°C, v_D = 12 V
I_H
T_vj = 25°C, v_D = 12 V, R_GK ≥ 10 Ω I_L
i_GM = 3 A, di_G/dt = 6 A/µs, t_g = 20 µs
T_vj = T_{vj max}
v_D = V_DRM, v_R = V_RRM
i_D, i_R
DIN IEC 60747-6
t_gd
T_vj = 25 °C,i_GM = 3 A, di_G/dt = 6 A/µs
date of publication: 2006-12-08
revision:
5
typ. 2,45 V
max. 2,95 V
typ. 1,083 V
max. 1,267 V
typ. 0,274 mΩ
max. 0,336 mΩ
A 0,6702
B 0,00007544
C -0,02702
D 0,023126
A 0,72998
B 0,0001113
C -0,01889
D 0,02575
max. 350 mA
max. 2,5 V
max.
max.
max.
20 mA
10 mA
0,4 V
max. 350 mA
max.
3A
max. 900 mA
max.
2 µs
BIP AM / SM PB, 2002-04-07, Przybilla J. / Keller
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