FZ1200R33KL2 Datasheet, PDF (1/9 Pages) eupec GmbH – Hochstzulassige Werte / Maximum rated values

Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 33 KL2
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
T_j = 25°C
T_j = -25°C
Kollektor-Dauergleichstrom
DC-collector current
T_C = 80°C
T_C = 25 °C
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t_P = 1 ms, T_C = 80°C
Gesamt-Verlustleistung
total power dissipation
T_C=25°C, Transistor
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
t_P = 1 ms
Grenzlastintegral der Diode
I²t - value, Diode
V_R = 0V, t_p = 10ms, T_Vj = 125°C
Spitzenverlustleistung der Diode
maximum power dissipation diode
T_j = 125°C
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
Teilentladungs-Aussetzspannung
partial discharge extinction voltage
RMS, f = 50 Hz, Q_PD £ 10 pC (acc. to IEC 1287)
vorläufiges Datenblatt
preliminary datasheet
V_CES
3300
V
3300
I_C,nom.
1200
A
I_C
2300
A
I_CRM
2400
A
P_tot
14,7
kW
V_GES
+/- 20V
V
I_F
1200
A
I_FRM
2400
A
I²t
440.000
A²s
P_RQM
1.500
kW
V_ISOL
6.000
V
V_ISOL
2.600
V
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
I_C = 1200A, V_GE = 15V, Tvj = 25°C
I_C = 1200A, V_GE = 15V, T_vj = 125°C
Gate-Schwellenspannung
gate threshold voltage
I_C = 120 mA, V_CE = V_GE, T_vj = 25°C
Eingangskapazität
input capacitance
f = 1MHz,T_vj = 25°C,V_CE = 25V, V_GE = 0V
Rückwirkungskapazität
reverse transfer capacitance
f = 1MHz,T_vj = 25°C,V_CE = 25V, V_GE = 0V
Gateladung
gate charge
V_GE = -15V ... + 15V, V_CE = 1800V
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V_CE = 3300V, V_GE = 0V, T_vj = 25°C
Gate-Emitter Reststrom
gate-emitter leakage current
V_CE = 0V, V_GE = 20V, T_vj = 25°C
min. typ. max.
V_{CE sat}
-
3,00 3,65
V
-
3,70 4,45
V
V_GE(th)
4,2
5,1
6,0
V
C_ies
-
145
-
nF
C_res
-
8
-
nF
Q_G
-
22
-
µC
I_CES
-
-
5
mA
I_GES
-
-
400
nA
prepared by: J. Biermann
approved by: Christoh Lübke; 2002-04-30
date of publication : 2002-04-23
revision: 3
1 (9)
FZ1200R33KL2_V Rev3.xls