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FZ1200R17KF6CB2 Datasheet, PDF (1/9 Pages) eupec GmbH – Hochstzulassige Werte / Maximum rated values
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 17 KF6C B2
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Tvj = 25°C
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
TC = 80 °C
TC = 25 °C
tP = 1 ms, TC = 80°C
vorläufige Daten
preliminary data
VCES
1700
V
IC,nom.
1200
A
IC
1950
A
ICRM
2400
A
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Ptot
9,6
kW
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
VGES
+/- 20V
V
Dauergleichstrom
DC forward current
IF
1200
A
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I2t - value, Diode
Isolations-Prüfspannung
insulation test voltage
tp = 1 ms
VR = 0V, tp = 10ms, TVj = 125°C
RMS, f = 50 Hz, t = 1 min.
IFRM
I2t
VISOL
2400
380
4
A
kA2s
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
IC = 1200A, V GE = 15V, Tvj = 25°C
IC = 1200A, V GE = 15V, Tvj = 125°C
IC = 80mA, VCE = VGE, Tvj = 25°C
Gateladung
gate charge
VGE = -15V ... +15V
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
VCE = 1700V, V GE = 0V, Tvj = 25°C
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 0V, VGE = 20V, Tvj = 25°C
prepared by: A. Wiesenthal
approved by: Christoph Lübke; 12.04.2001
date of publication: 05.04.2001
revision: 1 (preliminary)
min. typ. max.
VCE sat
2,6
3,1
V
3,1
3,6
V
VGE(th)
4,5
5,5
6,5
V
QG
14,5
µC
Cies
79
nF
Cres
4
nF
ICES
5
mA
IGES
400
nA
1(8)
FZ1200R17KF6CB2_V.xls
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