FF200R17KE3 Datasheet, PDF (1/9 Pages) eupec GmbH – IGBT-Modules

Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FF 200 R17 KE3
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
T_vj = 25°C
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collctor current
T_C = 80 °C
T_C = 25 °C
t_P = 1 ms, T_C = 80°C
vorläufige Daten
preliminary data
V_CES
I_C,nom.
I_C
I_CRM
1.700
V
200
A
390
A
400
A
Gesamt-Verlustleistung
total power dissipation
T_C=25°C, Transistor
P_tot
1250
W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
V_GES
I_F
+/- 20V
V
200
A
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I²t - value, Diode
Isolations-Prüfspannung
insulation test voltage
tp = 1 ms
V_R = 0V, t_p = 10ms, T_Vj = 125°C
RMS, f = 50 Hz, t = 1 min.
I_FRM
I²t
V_ISOL
400
A
5,4
k A²s
3,4
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
I_C = 200A, V_GE = 15V, T_vj = 25°C
I_C = 200A, V_GE = 15V, T_vj = 125°C
I_C = 8mA, V_CE = V_GE, T_vj = 25°C
Gateladung
gate charge
V_GE = -15V ... +15V
Eingangskapazität
input capacitance
f = 1MHz,T_vj = 25°C,V_CE = 25V, V_GE = 0V
Rückwirkungskapazität
reverse transfer capacitance
f = 1MHz,T_vj = 25°C,V_CE = 25V, V_GE = 0V
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V_CE = 1700V, V_GE = 0V, T_vj = 25°C
Gate-Emitter Reststrom
gate-emitter leakage current
V_CE = 0V, V_GE = 20V, T_vj = 25°C
V_{CE sat}
min.
-
-
typ. max.
2,0
2,45 V
2,4
-
V
V_GE(th)
5,2
5,8
6,4 V
Q_G
-
1,2
-
µC
C_ies
-
17
-
nF
C_res
-
0,6
-
nF
I_CES
-
-
5 mA
I_GES
-
-
400 nA
prepared by: Alfons Wiesenthal
approved by: Christoph Lübke; 2002-07-15
date of publication: 2002-07-15
revision: 2.0
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DB_FF200R17KE3_2.0.xls