BYM200B170DN2 Datasheet, PDF (1/5 Pages) eupec GmbH – IGBT-Modules

Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BYM 200 B 170 DN2
vorläufige Daten
preliminary data
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Sperrspannung der Diode
Diode rerverse voltage
T_vj = 25°C
Dauergleichstrom
DC forward current
T_C = 80 °C
Periodischer Spitzenstrom
repetitive peak forward current
tp = 1 ms
Grenzlastintegral der Diode
I²t - value, Diode
V_R = 0V, t_p = 10ms, T_Vj = 125°C
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
V_CES
I_F
I_FRM
I²t
V_ISOL
1700
200
400
14,5
4,0
V
A
A
k A²s
kV
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
I_F = 200A, V_GE = 0V, T_vj = 25°C
I_F = 200A, V_GE = 0V, T_vj = 125°C
I_F = 200A, - di_F/dt = 3000A/µs
V_R = 900V, V_GE = -15V, T_vj = 25°C
V_R = 900V, V_GE = -15V, T_vj = 125°C
I_F = 200A, - di_F/dt = 3000A/µs
V_R = 900V, V_GE = -15V, T_vj = 25°C
V_R = 900V, V_GE = -15V, T_vj = 125°C
I_F = 200A, - di_F/dt = 3000A/µs
V_R = 900V, V_GE = -15V, T_vj = 25°C
V_R = 900V, V_GE = -15V, T_vj = 125°C
min. typ. max.
V_F
-
2,2
2,6
V
-
2,0
-
V
I_RM
-
130
-
A
-
190
-
A
Q_r
-
22
-
µAs
-
50
-
µAs
E_rec
-
10
-
mWs
-
20
-
mWs
prepared by: Alfons Wiesenthal
approved by: Christoph Lübke
date of publication: 2002-11-25
revision: 2.2
1(4)
DB_BYM200B170DN2_2.2.xls