BSM50GB120DLC Datasheet, PDF (1/9 Pages) eupec GmbH – IGBT-Modules

Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM50GB120DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
T_vj= 25° C
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
T_C = 80 °C
T_C = 25 °C
t_P = 1 ms, T_C = 80°C
Gesamt-Verlustleistung
total power dissipation
T_C=25°C, Transistor
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
t_P = 1 ms
Grenzlastintegral der Diode
I²t - value, Diode
V_R = 0V, t_p = 10ms, T_Vj = 125°C
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
V_CES
1200
V
I_C,nom.
50
A
I_C
115
A
I_CRM
100
A
P_tot
460
W
V_GES
+/- 20V
V
I_F
50
A
I_FRM
100
A
I²t
430
A²s
V_ISOL
2,5
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
I_C = 50A, V_GE = 15V, T_vj = 25°C
I_C = 50A, V_GE = 15V, T_vj = 125°C
I_C = 2mA, V_CE = V_GE, T_vj = 25°C
Gateladung
gate charge
V_GE = -15V...+15V
Eingangskapazität
input capacitance
f = 1MHz,T_vj = 25°C,V_CE = 25V, V_GE = 0V
Rückwirkungskapazität
reverse transfer capacitance
f = 1MHz,T_vj = 25°C,V_CE = 25V, V_GE = 0V
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V_CE = 1200V, V _GE = 0V, T_vj = 25°C
Gate-Emitter Reststrom
gate-emitter leakage current
V_CE = 0V, V_GE = 20V, T_vj = 25°C
prepared by: MOD-D2, Mark Münzer
approved by: SM TM; Wilhelm Rusche
date of publication: 2003-01-10
revision: 3.0
min. typ. max.
V_{CE sat}
-
-
2,1
2,6
V
2,4
2,9
V
V_GE(th)
4,5
5,5
6,5
V
Q_G
-
0,53
-
µC
C_ies
-
3,3
-
nF
C_res
-
0,21
-
nF
I_CES
-
-
5
mA
I_GES
-
-
400
nA
1(8)
DB_BSM50GB120DLC_3.0
2003-01-10