BSM50GAL120DN2 Datasheet, PDF (1/6 Pages) Siemens Semiconductor Group – IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate)

BSM 50 GAL 120 DN2
IGBT Power Module
• Single switch with chopper diode at collector
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 50 GAL 120 DN2
V_CE I_C
1200V 78A
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R_GE = 20 kΩ
Gate-emitter voltage
DC collector current
T_C = 25 °C
T_C = 80 °C
Pulsed collector current, t_p = 1 ms
T_C = 25 °C
T_C = 80 °C
Power dissipation per IGBT
T_C = 25 °C
Chip temperature
Storage temperature
Package
Ordering Code
HALF BRIDGE GAL 1 C67076-A2010-A70
Symbol
V_CE
V_CGR
V_GE
I_C
I_Cpuls
P_tot
T_j
T_stg
Values
Unit
1200
V
1200
± 20
A
78
50
156
100
W
400
+ 150
°C
-40 ... + 125
Thermal resistance, chip case
Diode thermal resistance, chip case
Diode thermal resistance, chip-case,chopper
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
R_thJC
R_thJCD
RTHJCDC
V_is
-
-
-
-
≤ 0.3
K/W
≤ 0.6
≤ 0.5
2500
Vac
20
mm
11
F
sec
40 / 125 / 56
1
Nov-24-1997