BSM400GA120DN2 Datasheet, PDF (1/11 Pages) eupec GmbH – IGBT Power Module

BSM 400 GA 120 DN2
IGBT Power Module
• Single switch
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 400 GA 120 DN2
BSM 400 GA 120 DN2 S
V_CE I_C
1200V 550A
1200V 550A
Package
SINGLE SWITCH
SSW SENSE 1
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R_GE = 20 kΩ
Gate-emitter voltage
DC collector current
T_C = 25 °C
T_C = 80 °C
Pulsed collector current, t_p = 1 ms
T_C = 25 °C
T_C = 125 °C
Power dissipation per IGBT
T_C = 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
V_CE
V_CGR
V_GE
I_C
I_Cpuls
P_tot
T_j
T_stg
R_thJC
R_thJCD
V_is
-
-
-
-
Ordering Code
C67070-A2302-A70
C67070-A2308-A70
Values
Unit
1200
V
1200
± 20
A
550
400
1100
800
W
2700
+ 150
°C
-40 ... + 125
≤ 0.045
K/W
≤ 0.09
2500
Vac
20
mm
11
F
sec
40 / 125 / 56
1
Oct-30-1997