BSM35GB120DLC Datasheet, PDF (1/8 Pages) eupec GmbH – vorlafige Daten preliminary data

Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM35GB120DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
T_C = 80 °C
T_C = 25 °C
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t_P = 1 ms, T_C = 80°C
Gesamt-Verlustleistung
total power dissipation
T_C=25°C, Transistor
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
t_P = 1 ms
Grenzlastintegral der Diode
I²t - value, Diode
V_R = 0V, t_p = 10ms, T_Vj = 125°C
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
vorläufige Daten
preliminary data
V_CES
1200
V
I_C,nom.
35
A
I_C
75
A
I_CRM
70
A
P_tot
310
W
V_GES
+/- 20V
V
I_F
35
A
I_FRM
70
A
I²t
400
A²s
V_ISOL
2,5
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
I_C = 35A, V_GE = 15V, T_vj = 25°C
I_C = 35A, V_GE = 15V, T_vj = 125°C
Gate-Schwellenspannung
gate threshold voltage
I_C = 1,2mA, V_CE = V_GE, T_vj = 25°C
Gateladung
gate charge
V_GE = -15V...+15V
Eingangskapazität
input capacitance
f = 1MHz,T_vj = 25°C,V_CE = 25V, V_GE = 0V
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
f = 1MHz,T_vj = 25°C,V_CE = 25V, V_GE = 0V
V_CE = 1200V, V_GE = 0V, T_vj = 25°C
V_CE = 1200V, V_GE = 0V, T_vj = 125°C
V_CE = 0V, V_GE = 20V, T_vj = 25°C
prepared by: Mark Münzer
approved by:
date of publication: 15.5.1999
revision: 1
1(8)
min. typ. max.
V_{CE sat}
-
-
2,1
2,6
V
2,4
V
V_GE(th)
4,5
5,5
6,5
V
Q_G
-
0,35
-
µC
C_ies
-
2
-
nF
C_res
-
t.b.d.
-
nF
I_CES
-
5
500
µA
-
250
µA
I_GES
-
-
400
nA
Datenblatt_BSM35GB120DLC.xls