English
Language : 

BSM150GB120DLC Datasheet, PDF (1/8 Pages) eupec GmbH – Technische Information / Technical Information
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM150GB120DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
TC = 80 °C
TC = 25 °C
tP = 1 ms, TC = 80°C
vorläufige Daten
preliminary data
VCES
1200
V
IC,nom.
150
A
IC
300
A
ICRM
300
A
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Ptot
1,2
kW
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
VGES
+/- 20V
V
IF
150
A
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I2t - value, Diode
Isolations-Prüfspannung
insulation test voltage
tP = 1 ms
VR = 0V, tp = 10ms, TVj = 125°C
RMS, f = 50 Hz, t = 1 min.
IFRM
I2t
VISOL
300
A
-
kA2s
2,5
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
IC = 150A, VGE = 15V, Tvj = 25°C
IC = 150A, VGE = 15V, Tvj = 125°C
IC = 6mA, VCE = VGE, Tvj = 25°C
Gateladung
gate charge
VGE = -15V...+15V
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
VCE = 1200V, V GE = 0V, Tvj = 25°C
VCE = 1200V, V GE = 0V, Tvj = 125°C
VCE = 0V, VGE = 20V, Tvj = 25°C
prepared by: Mark Münzer
approved by: Jens Thurau
date of publication: 02.12.1998
revision: 1a
min. typ. max.
VCE sat
-
-
2,1
2,6
V
2,4
V
VGE(th)
4,5
5,5
6,5
V
QG
-
-
-
µC
Cies
-
11
-
nF
Cres
-
-
-
nF
ICES
-
0,01
0,5
mA
-
0,5
mA
IGES
-
-
400
nA
1(8)
DB_BSM150GB120DLC.xls
 ▷