F0100613B Datasheet, PDF (7/7 Pages) Eudyna Devices Inc – 10Gb/s Receiver Transimpedance Amplifier

F0100613B
Die-Chip Description
10Gb/s Transimpedance Amplifier
The F0100613B is shipped like the die-chip described above. The die thickness is typically
280um ± 20um with the available pad size uncovered by a passivation film of 75um
square.The material of the pads is TiW/Pt/Au and the backside is metalized by Ti/Au.
Assembling Condition
SEI recommends the assembling process as shown below and affirms sufficient wire-pull
and die-share strength. The heating time of one minute at the temperature of 310°C gave
satisfactory results for die-bonding with AuSn performs. The heating and ultrasonic
wire-bonding at the temperature of 150°C by a ball-bonding machine is effective.
Quality Assurance
For the F01 series products, there is only one technically inevitable drawback in terms of
quality assurance which is to be impossible of the burn-in test for screening owning to
die-shipment. SEI will not ship them if customers do not agree on this point. On the other
hand, the lot assurance test is performed completely without any problems according to
SEI’s authorized rules. A microscope inspection is conducted in conformance with the
MIL-STD-883C Method 2010.7.
Precautions
Owing to their small dimensions, the GaAs FET’s from which the F0100613B is designed
are easily damaged or destroyed if subjected to large transient voltages. Such transients
can be generated by power supplies when switched on if not properly decoupled. It is also
possible to induce spikes from static-electricity-charged operations or ungrounded equip-
ment.