P0120004P Datasheet, PDF (5/13 Pages) Eudyna Devices Inc – 1.5W GaAs Power FET (Pb-Free Type)

P0120004P
1.5W GaAs Power FET (Pb-Free Type)
Tc=25°C, Vds=6V, Ids=400mA, Pin=5d Bm
Technical Note
SUMITOMO ELECTRIC
[Pout -Ls tate ]
f = 2.1GHz
+j25
Γ_pout : 0.48∠ 172.8
Source : 0.81∠ -152.1
Pout max : 17.5d Bm
+j50
+j100
[ IP3 - Ls ta te]
f1 = 2.1GHz
f2 = 2.101GHz
+j25
Γ_IP3 : 0.69∠ -141.8
Source : 0.77∠ -155.2
IP3 max : 45.6d Bm
+j50
+j100
16.25
17.5
25Ω
50Ω
100Ω
25Ω
50Ω
43.1
45.6
100Ω
-j25
-j100
-j50
Tc=25°C, Vds=6V, Ids=350mA, Pin=5d Bm
[Pout -Ls tate ]
f = 2.1GHz
+j25
Γ_pout : 0.50∠ 177.2
Source : 0.81∠ -152.1
Pout max : 17.95dBm
+j50
+j100
16.7
17.95
25Ω
50Ω
100Ω
-j25
-j50
-j100
[ IP3 - Ls ta te]
f1 = 2.1GHz
f2 = 2.101GHz
+j25
Γ_IP3 : 0.66∠ -142.0
Source : 0.77∠ -155.2
IP3 max : 43.9d Bm
+j50
+j100
25Ω
50Ω
100Ω
43.9
-j25
-j100
-j50
41.4
-j25
-j50
-j100
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: [phone] Fax: [phone] e-mail : [e-mail] Web Site: www.sei.co.jp/GaAsIC/
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