ESN35A030MK Datasheet, PDF (2/4 Pages) Eudyna Devices Inc – High Voltage - High Power GaN-HEMT

ES/EGN35A030MK
High Voltage - High Power GaN-HEMT
Output Power vs. Frequency
VDS=50V IDS(DC)=200mA
50
Output Power and Drain Efficiency vs. Input Power
VDS=50V IDS(DC)=200mA f=3.5GHz
50
100
48
46
44
42
40
38
36
34
32
30
3.35 3.40
Pin=20dBm
Pin=32dBm
48
90
46
80
44
70
42
60
40
50
ary _{3.45 3.50 3.55}
in _{Frequency [GHz]}
Pin=24dBm
lim ^Pin=36dBm
3.60 3.65
Pin=28dBm
38
40
36
30
34
20
32
10
30
0
18 20 22 24 26 28 30 32 34 36 38
Input Power [dBm]
re ^{Power Derating Curve}
P ⁸⁰
70
60
50
40
30
20
10
0
0
50 100 150 200 250 300
Case Temperature [^oC]
Edition 1.2
Dec. 2005
2