ESN26A180IV Datasheet, PDF (2/4 Pages) Eudyna Devices Inc – High Voltage - High Power GaN-HEMT

ES/EGN26A180IV
High Voltage - High Power GaN-HEMT
Output Power vs. Frequency
VDS=50V IDS(DC)=1000mA
56
Output Power and Drain Efficiency vs. Input Power
VDS=50V IDS(DC)=1000mA f=2.6GHz
56
100
54
52
50
48
46
44
42
40
38
36
2.45 2.50
Pin=26dBm
Pin=38dBm
54
90
52
80
50
70
48
60
46
50
ary _{2.55 2.60 2.65}
in _{Frequency [GHz]}
Pin=30dBm
lim ^Pin=42dBm
2.70 2.75
Pin=34dBm
44
40
42
30
40
20
38
10
36
0
25 27 29 31 33 35 37 39 41 43
Input Power [dBm]
re ^{Power Derating Curve}
P ³⁰⁰
250
200
150
100
50
Edition 1.2
Dec. 2005
0
0
50 100 150 200 250 300
Case Temperature [^oC]
2