ESN26A090IV Datasheet, PDF (2/4 Pages) Eudyna Devices Inc – High Voltage - High Power GaN-HEMT

ES/EGN26A090IV
High Voltage - High Power GaN-HEMT
Output Power vs. Frequency
VDS=50V IDS(DC)=500mA
53
Output Power and Drain Efficiency vs. Input Power
VDS=50V IDS(DC)=500mA f=2.6GHz
53
100
51
49
47
45
43
41
39
37
35
33
2.45 2.50
Pin=22dBm
Pin=34dBm
51
90
49
80
47
70
45
60
43
50
ary _{2.55 2.60 2.65}
in _{Frequency [GHz]}
Pin=26dBm
lim ^Pin=38dBm
2.70 2.75
Pin=30dBm
41
40
39
30
37
20
35
10
33
0
21 23 25 27 29 31 33 35 37 39
Input Power [dBm]
re ^{Power Derating Curve}
P ¹⁶⁰
140
120
100
80
60
40
20
0
0
50 100 150 200 250 300
Case Temperature [^oC]
Edition 1.2
Dec. 2005
2