ESN26A030MK Datasheet, PDF (2/4 Pages) Eudyna Devices Inc – High Voltage - High Power GaN-HEMT

ES/EGN26A030MK
High Voltage - High Power GaN-HEMT
Output Power vs. Frequency
VDS=50V IDS(DC)=200mA
50
Output Power and Drain Efficiency vs. Input Power
VDS=50V IDS(DC)=200mA f=2.6GHz
50
100
48
46
44
42
40
38
36
34
32
30
2.45 2.50
Pin=20dBm
Pin=32dBm
48
90
46
80
44
70
42
60
inary 2.55 2.60 2.65
Frequency [GHz]
Pin=24dBm
lim ^Pin=36dBm
2.70 2.75
Pin=28dBm
40
50
38
40
36
30
34
20
32
10
30
0
19 21 23 25 27 29 31 33 35 37
Input Power [dBm]
re ^{Power Derating Curve}
P ⁸⁰
70
60
50
40
30
20
10
0
0
50 100 150 200 250 300
Case Temperature [^oC]
Edition 1.2
Dec. 2005
2