F0100109B Datasheet, PDF (10/10 Pages) Eudyna Devices Inc – 3.3 V /5V 156 Mb/s Receiver Transimpedance Amplifier

3.3 V / 5V 156 Mb/s Transimpedance Amplifier
F0100109B
for such applications.
The differential circuit configuration in the output enable a complete differential operation
to reduce common mode noise: simple single ended output operation is also available.
♦ Die-Chip Description
The F0100109B is shipped like the die-chip described above. The die thickness is
typically 280 µm ± 20 µm with the available pad size uncovered by a passivation film of 95 µm
square. The material of the pads is TiW/Pt/Au and the backside is metalized by Ti/Au.
♦ Assembling Condition
SEI recommends the assembling process as shown below and affirms sufficient wire-pull
and die-shear strength. The heating time of one minute at the temperature of 310 °C gave
satisfactory results for die-bonding with AuSn performs. The heating and ultrasonic wire-
bonding at the temperature of 150 °C by a ball-bonding machine is effective.
♦ Quality Assurance
For the F01 series products, there is only one technically inevitable drawback in terms of
quality assurance which is to be impossible of the burn-in test for screening owing to die-
shipment. SEI will not ship them if customers do not agree on this point. On the other hand,
the lot assurance test is performed completely without any problems according to SEI’s au-
thorized rules. A microscope inspection is conducted in conformance with the MIL-STD-
883C Method 2010.7.
♦ Precautions
Owing to their small dimensions, the GaAs FET’s from which the F0100109B is designed
are easily damaged or destroyed if subjected to large transient voltages. Such transients can
be generated by power supplies when switched on if not properly decoupled. It is also pos-
sible to induce spikes from static-electricity-charged operations or ungrounded equipment.
Electron Device Department