FSX027X Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – GaAs FET & HEMT Chips

FSX027X
FEATURES
• Medium Power Output: P1dB=24.5dBm(Typ.)@8.0GHz
• High Power Gain: G1dB=10dB(Typ.)@8.0GHz
• Proven Reliability
GaAs FET & HEMT Chips
DRAIN
DESCRIPTION
The FSX027X is a general purpose GaAs FET designed for medium
power applications up to 12GHz. These devices have a wide dynamic
range and are suitable for use in medium power, wide band, linear
drive amplifiers or oscillators.
SOURCE
SOURCE
GATE
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25°C)
Parameter
Symbol
Condition
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
VDS
VGS
PT
TSTG
Tc = 25°C
Channel Temperature
TCH
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 8 volts.
2. The forward and reverse gate currents should not exceed 1.4 and -0.2 mA respectively with
gate resistance of 1000Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
12
-5
1.5
-65 to 175
175
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Limit
Min. Typ. Max.
Saturated Drain Current
IDSS VDS = 3V, VGS = 0V
70 110 150
V
V
W
°C
°C
Unit
mA
Transconductance
gm VDS = 3V, IDS = 54mA
- 100 ^-
mS
Pinch-off Voltage
Vp VDS = 3V, IDS = 5.4mA -0.7 -1.2 -1.7
V
Gate Source Breakdown Voltage VGSO IGS = -5.4µA
-5.0 ^-
-
V
Noise Figure
Associated Gain
NF
- 2.5 -
dB
VDS = 3V, IDS = 30mA
Gas ^{f = 8GHz}
- 9.5 ^-
dB
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Thermal Resistance
f = 4GHz - 24.5 -
P1dB
VDS = 8V,
f = 8GHz 23.5 24.5
IDS = 0.7IDSS _{f = 12GHz - 23.5}
-
-
G1dB
f = 4GHz
VDS = 8V,
IDS = 0.7IDSS
f = 8GHz
f = 12GHz
-
9.0
-
14.0
10.0
6.5
-
-
-
Rth Channel to Case
- 70 100
dBm
dBm
dBm
dB
dB
dB
°C/W
Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)
The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
G.C.P.: Gain Compression Point
Edition 1.2
July 1999
1