FSX027WF Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – General Purpose GaAs FET

FSX027WF
FEATURES
General Purpose GaAs FET
• Medium Power Output: P1dB=24.5dBm(Typ.)@8.0GHz
• High Power Gain: G1dB=10dB(Typ.)@8.0GHz
• Hermetic Metal/Ceramic Package
• Proven Reliability
DESCRIPTION
The FSX027WF is a general purpose GaAs FET designed for medium
power applications up to the 12GHz. These devices have a wide
dynamic range and are suitable for use in medium power, wide band,
linear drive amplifiers or oscillators.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25°C)
Item
Symbol
Condition
Rating
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
VDS
VGS
PT
TSTG
Tc = 25°C
12
-5
1.5
-65 to 175
Channel Temperature
TCH
175
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 8 volts.
2. The forward and reverse gate currents should not exceed 1.4 and -0.2 mA respectively with
gate resistance of 1000Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Limit
Min. Typ.
Max.
Saturated Drain Current
IDSS VDS = 3V, VGS = 0V
70 110 150
Unit
V
V
W
°C
°C
Unit
mA
Transconductance
gm VDS = 3V, IDS = 54mA
- 100 ^-
mS
Pinch-off Voltage
Vp VDS = 3V, IDS = 5.4mA -0.7 -1.2 -1.7
V
Gate Source Breakdown Voltage VGSO IGS = -5.4µA
-5.0 ^-
-
V
Noise Figure
Associated Gain
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Thermal Resistance
CASE STYLE: WF
NF
Gas
P1dB
G1dB
Rth
- 2.5 -
dB
VDS = 3V, IDS = 30mA
f = 8GHz
- 9.5 ^-
dB
f = 4GHz - 24.5 -
VDS = 8V,
f = 8GHz 23.5 24.5 ^-
IDS = 0.7IDSS _{f = 12GHz - 23.5 -}
f = 4GHz
VDS = 8V,
IDS = 0.7IDSS
f = 8GHz
f = 12GHz
-
9.0
-
14.0
10.0
6.5
-
-
-
Channel to Case
- 70 100
dBm
dBm
dBm
dB
dB
dB
°C/W
G.C.P.: Gain Compression Point
Edition 1.2
July 1999
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