FSX017LG Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – General Purpose GaAs FET

FSX017LG
General Purpose GaAs FET
FEATURES
• Medium Power Output: P1dB = 16.0dBm (Typ.)@12.0GHz
• High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz
• Proven Reliability
• Cost Effective Hermetic Microstrip Package
• Tape and Reel Available
DESCRIPTION
The FSX017LG is a general purpose GaAs FET designed for medium
power applications up to 12GHz. These devices have a wide dynamic
range and are suitable for use in medium power, wide band, linear drive
amplifiers.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Note: Mounted on Al2O3 board (30 x 30 x 0.65mm)
VDS
VGS
Ptot
Tstg
Tch
Note
For reliable operation of this FET:
1. The drain - source operating voltage (VDS) should not exceed 4 volts.
2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with
gate resistance of 2000Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
Rating
8
-5
220
-65 to +175
175
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Symbol
Test Conditions
IDSS VDS = 3V, VGS = 0V
Min.
35
Limit
Typ. Max.
55 75
Transconductance
gm VDS = 3V, IDS = 27mA
- 50 -
Pinch-off Voltage
Vp VDS = 3V, IDS = 2.7mA -0.7 -1.2 -1.7
Gate Source Breakdown Voltage VGSO _{IGS = -2.7µA}
-5
-
-
Unit
V
V
mW
°C
°C
Unit
mA
mS
V
V
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS = 4V
IDS = 30mA
f = 12GHz
15.0 16.0 -
7.0 8.0 -
dBm
dB
Thermal Resistance
Rth _{Channel to Case}
CASE STYLE: LG
Note: The RF parameters are measured on a lot basis by sample testing
at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested.
- 300 400
°C/W
G.C.P.: Gain Compression Point
Edition 1.2
July 1999
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