FSU02LG Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – General Purpose GaAs FET

FEATURES
• High Output Power: P1dB = 23.0dBm (Typ.)@2GHz
• High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz
• Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz
• Low Bias Conditions: VDS=3V, 20mA
• Cost Effective Hermetic Microstrip Package
• Tape and Reel Available
FSU02LG
General Purpose GaAs FET
DESCRIPTION
The FSU02LG is a high performance, low noise, GaAs FET designed for
PCS/PCN applications as a driver in the 2GHz band.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
Ptot
Note
Storage Temperature
Tstg
Channel Temperature
Tch
Note: Mounted on Al2O3 board (30 x 30 x 0.65mm)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 6 volts.
2. The forward and reverse gate currents should not exceed 1.4 and -0.2 mA respectively with
gate resistance of 2000Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
12
-5
750
-65 to +175
175
V
V
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 3V, VGS = 0V
VDS = 3V, IDS =54mA
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB
Gain Compression Point
Power Gain at 1dB
Gain Compression Point
Vp
VGSO
P1dB
G1dB
VDS = 3V, IDS = 5.4mA
IGS = -5.4µA
VDS = 6V
IDS(DC) = 80mA
f = 2GHz
Noise Figure
Associated Gain
Thermal Resistance
NF ^{VDS = 3V}
Gas
IDS = 20mA
f = 2GHz
Rth _{Channel to Case}
AVAILABLE CASE STYLES: LG
Note: The RF parameters are measured on a lot basis by sample testing
at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested.
Min.
80
-
-0.7
-5
22.0
16.0
-
-
-
Limit
Typ. Max.
110 150
100 -
-1.2 -1.7
-
-
23.0 -
Unit
mA
mS
V
V
dBm
17.0 -
dB
1.5 ^-
dB
17.5 ^-
dB
150 200
°C/W
G.C.P.: Gain Compression Point
Edition 1.2
July 1999
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