FSU01LG Datasheet, PDF (1/5 Pages) Eudyna Devices Inc – General Purpose GaAs FET

FEATURES
• High Output Power: P1dB = 20.0dBm (Typ.)
• High Associated Gain: G1dB = 19.0dB (Typ.)
• Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz
• Low Bias Conditions: VDS=3V, 10mA
• Cost Effective Hermetic Microstrip Package
• Tape and Reel Available
FSU01LG
General Purpose GaAs FET
DESCRIPTION
The FSU01LG is a high performance, low noise, GaAs FET designed for
PCS/PCN applications as a driver in the 2GHz band.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
Ptot
Note
Storage Temperature
Tstg
Channel Temperature
Tch
Note: Mounted on Al2O3 board (30 x 30 x 0.65mm)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 6 volts.
2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with
gate resistance of 2000Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
12.0
-5
375
-65 to +175
175
V
V
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Saturated Drain Current
Transconductance
Pinch-off Voltage
IDSS
gm
Vp
VDS = 3V, VGS = 0V
VDS = 3V, IDS = 27mA
VDS = 3V, IDS = 2.7mA
Gate Source Breakdown Voltage
Output Power at 1dB
Gain Compression Point
Power Gain at 1dB
Gain Compression Point
VGSO
P1dB
G1dB
IGS = -2.7µA
VDS = 6V
IDS = 40mA
f = 2GHz
Noise Figure
Associated Gain
Thermal Resistance
NF ^{VDS = 3V}
Gas
IDS = 10mA
f = 2GHz
Rth _{Channel to Case}
AVAILABLE CASE STYLES: LG
Note: The RF parameters are measured on a lot basis by sample testing
at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested.
Min.
35
-
-0.7
-5
19.0
18.0
-
-
-
Limit
Typ. Max.
55 75
50 -
-1.2 -1.7
-
-
20.0 -
Unit
mA
mS
V
V
dBm
19.0 -
dB
0.55 ^-
dB
18.5 ^-
dB
300 400
°C/W
G.C.P.: Gain Compression Point
Edition 1.2
July 1999
1