FPD5W1KX Datasheet, PDF (1/6 Pages) Eudyna Devices Inc – Avalanche Photodiode

Avalanche Photodiode
FPD5W1KX
FEATURES
• Data rates up to 2.5Gb/s
• Operating temperature: -40°c to 85°C
• Photosensitive diameter: 30µm
• High cut-off frequency: 3.0GHz at M=5 and 10
• Large gain-bandwidth product: 40GHz
• Low dark current: 20nA
• Low multipled dark current: 3nA
• Low excess noise factor: 5 at M=10
APPLICATIONS
• 2.4 Gb/s optical transmission systems
DESCRIPTION
The FPD5W1KX is a wide bandwidth, high sensitivity avalanche photodiode (APD)
optimized for operation at 1550nm. This APD is designed for use in optical transmission
systems operating at a giga-bit-rate, above 2.4Gb/s, and for long transmission distances.
The APD chip has a photosensitive area diameter of 30µm. Fujitsu’s advanced InP
material technology realizes a high reliability planar structure device with wide bandwidth
(large gain-bandwidth product) as well as low noise characteristics. A single-mode fiber is
aligned to a hermetically sealed APD through a highly stable optical coupling system.
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Min.
Max.
Storage Temperature
Tstg
-40
+85
Operating Temperature
Top
-40
+85
APD Reverse Current
I_R
0
3(peak)
APD Forward Current
IF
-
10
APD Reverse Voltage
VR
-
VB
Note: Since VB may vary from device-to-device, VB data is attached to each device for reference.
Unit
°C
°C
mA
mA
V
Edition 1.1
July 2004
1