FMM5815GJ-1 Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – 17.7-19.7GHz Power Amplifier MMIC

FMM5815GJ-1
FEATURES
• High Output Power: P1dB = 31dBm (Typ.)
• High Gain: G1dB = 20dB (Typ.)
• High PAE: η_add = 25% (Typ.)
• Impedance Matched Zin/Zout = 50Ω
• 0.25µm PHEMT Technology
17.7-19.7GHz Power Amplifier MMIC
DESCRIPTION
The FMM5815GJ is a packaged, high-gain, high linearity,
amplifier designed for operation in the17.7-19.7GHz
frequency range. This amplifier has an input and output
designed for use in 50Ω systems.This device is well suited for
point-to-point communication applications.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDD
10
V
Gate-Source Voltage
VGG
-7.0
V
Input Power
Pin
22
dBm
Storage Temperature
Tstg
Operating Case Temperature
Top
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 6 volts.
-55 to +125
°C
-40 to +85
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25°C)
Item
Symbol
Conditions
Limits
Min. Typ. Max. ^Unit
Frequency Range
f
17.7 - 19.7 GHz
Output Power at 1 dB G.C.P.
P_1dB
29 31 -
dBm
Power Gain at 1 dB G.C.P.
G_1dB
Drain Current at 1 dB G.C.P.
Iddrf
Gate Current at 1 dB G.C.P.
Iggrf
Power-Added Efficiency at 1 dB G.C.P. ^ηadd
Input Return Loss
RLin
VDD = 6V
VGG = -5V
f = 17.7 ~ 19.7GHz
IDD = 600mA (Typ.)
ZS = ZL = 50Ω
18 20 23
dB
- 800 950
mA
- -12 -15
mA
- 25 -
%
- -10 -
dB
Output Return Loss
3rd Order Intermodulation
Distortion
CASE STYLE: GJ
RLout
-
-6
-
dB
IM3
∆f = 10MHz, 2-Tone Test,
Pout = 20dBm S.C.L.
-30
-35
-
dBc
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.1
April 2002
1