FMM5811GJ-1 Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – 17.7-23.6GHz Power Amplifier MMIC

FEATURES
• High Output Power: P1dB = 24.5dBm (Typ.)
• High Gain: G1dB = 15dB (Typ.)
• High PAE: η_add = 20% (Typ.)
• Wide Frequency Band: 17.7-23.6GHz
• Impedance Matched Zin/Zout = 50Ω
• 0.25µm PHEMT Technology
DESCRIPTION
The FMM5811GJ-1 is a high-gain, wide band 3-stage MMIC
amplifier designed for operation in the 17.7-23.6GHz
frequency range. This amplifier has an input and output
matching designed for use in a 50Ω systems.This device is
well suited for point-to-point radio applications.
FMM5811GJ-1
17.7-23.6GHz Power Amplifier MMIC
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
Gate-Source Voltage
Input Power
Storage Temperature
VDD
VGG
Pin
Tstg
Operating Backside Temperature
Top
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 6 volts.
Rating
10
-7
16
-55 to +125
-40 to +85
Unit
V
V
dBm
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Conditions
Limits
Min. Typ. Max.
Frequency Range
f
17.7 - 23.6
Output Power at 1 dB G.C.P.
P_1dB
23.0 24.5 -
Power Gain at 1 dB G.C.P.
G_1dB
12 15 20
Unit
GHz
dBm
dB
Gain Flatness
Power-Added Efficiency
Drain Current
Gate Current
Input Return Loss
Output Return Loss
∆G
η_add
Iddrf
Iggrf
RLin
RLout
VDD = 6V
VGG = -5V
f = 17.7 - 23.6 GHz
ZS = ZL = 50Ω
- 2.0 -
dB
- 20 -
%
- 250 400
mA
- -7.5 -15.0
mA
- -7.0 -
dB
- -5.0 -
dB
G.C.P.: Gain Compression Point
Edition 1.1
July 2001
1