FMM5051VF Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – 13.75-14.5GHz Power Amplifier MMIC

FEATURES
• High Output Power: 31.5dBm (typ.)
• High Linear Gain: 31.5dB (typ.)
• Low Input VSWR
• Broad Band: 13.75 ~ 14.5GHz
• Impedance Matched Zin/Zout = 50Ω
• Small Hermetic Metal-Ceramic Package (VF)
FMM5051VF
13.75-14.5GHz Power Amplifier MMIC
DESCRIPTION
The FMM5051VF is a MMIC amplifier that contains a three-stage
amplifier, internally matched, for standard communications in the
13.75 to 14.5GHz frequency range. This product is well suited for
VSAT applications as it offers high power, high gain, and low VSWR.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Item
Symbol
Rating
Drain-Source Voltage
VDD
8
Gate-Source Voltage
VGG
-3
Input Power
Pin
8
Storage Temperature
Tstg
-65 to +175
Operating Case Temperature
Top
-40 to +85
Fujitsu recommends the following conditions for the reliable operation of GaAs modules:
1. The drain operating voltage (VDD) should not exceed 5 volts.
2. The gate operating voltage (VGG) should not exceed 0 volts.
ELECTRICAL CHARACTERISTICS (Case Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Limit
Typ. Max.
Frequency Range
f
13.75-14.5
Unit
V
V
dBm
°C
°C
Unit
GHz
Output Power (Pin=3dBm)
Linear Gain
Gain Flatness
Input VSWR
Output VSWR
Pout
GL
∆G
VSWRi
VDD = 5V
VGG = 0V
f =13.75 to 14.5GHz
VSWRo
30.8 31.5 -
30.0 31.5 -
- 1.5 2
- 2:1 3:1
- 2:1 3:1
dBm
dB
dB
-
-
DC Input Current
CASE STYLE: VF
IDD
VDD = 5V, VGG = 0V
- 800 1000
mA
G.C.P.: Gain Compression Point
Edition 1.1
May 2001
1